Beamline Phone Number:
+44 (0) 1235 778651
Principal Beamline Scientist:
Cephise Cacho
Tel: +44 (0) 1235 778290
E-mail: [email protected]
Email: [email protected]
Tel: +44 (0)1235 778290
The HR branch of I05-ARPES has a wide range of applications that include:
Topological matter
Topological insulators, Dirac semimetals and investigation of the Weyl fermions.
Transition metal oxides
Quantitative analysis of electron interactions, Fermi surfaces, renormalisation, energy gaps;
High-Tc superconductors and Heavy Fermions
Superconducting gaps, related phase transitions, Ultra small bandwidth dispersions;
New materials
ARPES as soon as single crystals are grown, nano-ARPES from inclusions and samples that are difficult to cleave;
Surfaces & interfaces
Molecular adsorbates, ultrathin films, stepped surfaces, epitaxially grown nano-wires, topological insulators.
Transition metal dichalcogenides and other quasi-2D materials
Electronic and magnetic phase transitions, band structure determination, surface dosing studies
The nano-ARPES branch can be used to study some aspects of the above, and is additionally suitable for:
Micro-devices
The nanoARPES option to have 4 or 5 electrical connections to sample provides opportunity for in-operando studies of micro-devices
Carbon-based materials
Graphene, molecular electronics, carbon nanotubes, BN nanostructure; bilayers and twisted bilayer graphene.
Diamond Light Source is the UK's national synchrotron science facility, located at the Harwell Science and Innovation Campus in Oxfordshire.
Copyright © 2022 Diamond Light Source
Diamond Light Source Ltd
Diamond House
Harwell Science & Innovation Campus
Didcot
Oxfordshire
OX11 0DE
Diamond Light Source® and the Diamond logo are registered trademarks of Diamond Light Source Ltd
Registered in England and Wales at Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, United Kingdom. Company number: 4375679. VAT number: 287 461 957. Economic Operators Registration and Identification (EORI) number: GB287461957003.